Low voltage active CMOS pixel on an N-type substrate with...

Details Low voltage active CMOS pixel on an N-type substrate with... Low voltage active CMOS pixel on an N-type substrate with...

2006-04-04

2006-04-04

Le, Que T. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S2140RC

Reexamination Certificate

active

07022965

ABSTRACT:
A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vddand the output node. Finally, an output transistor with its gate coupled to the output node is provided.

REFERENCES:
patent: 5869857 (1999-02-01), Chen
patent: 6064053 (2000-05-01), Chi
patent: 6180969 (2001-01-01), Yang et al.
patent: 6218691 (2001-04-01), Chung et al.
patent: 6320617 (2001-11-01), Gee et al.
patent: 6690000 (2004-02-01), Muramatsu et al.
patent: 1223623 (2002-07-01), None
patent: 2000175107 (2000-06-01), None
patent: 2003234496 (2003-08-01), None

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