Low volatility solvent-based method for forming thin film nanopo

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427100, 4271263, 427422, 427427, B05D 512, B05D 102

Patent

active

059551402

ABSTRACT:
This invention has enabled a new, simple thin film nanoporous dielectric fabrication method. In general, this invention uses glycerol, or another low volatility compound, as a solvent. This new method allows thin film aerogels/low density xerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls. In another aspect, this invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, rapidly aged at an elevated temperature, and dried with only passive atmospheric controls, such as limiting the volume of the aging chamber.

REFERENCES:
patent: 4230803 (1980-10-01), Weidenbach et al.
patent: 4704299 (1987-11-01), Wielonski et al.
patent: 4713233 (1987-12-01), Marsh et al.
patent: 4851150 (1989-07-01), Hench et al.
patent: 4954327 (1990-09-01), Blount
patent: 5076980 (1991-12-01), Nogues et al.
patent: 5097317 (1992-03-01), Fujimoto et al.
patent: 5207814 (1993-05-01), Cogliati et al.
patent: 5236874 (1993-08-01), Pintchovski
patent: 5242647 (1993-09-01), Poco
patent: 5244691 (1993-09-01), Valente et al.
patent: 5271955 (1993-12-01), Maniar
patent: 5275796 (1994-01-01), Tillotson et al.
patent: 5294480 (1994-03-01), Mielke et al.
patent: 5342648 (1994-08-01), MacKenzie et al.
patent: 5368887 (1994-11-01), Hoshino et al.
patent: 5391364 (1995-02-01), Cogliati
patent: 5409683 (1995-04-01), Tillotson et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5472913 (1995-12-01), Havemann et al.
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5494858 (1996-02-01), Gnade et al.
patent: 5496527 (1996-03-01), Yokogawa et al.
patent: 5504042 (1996-04-01), Cho et al.
patent: 5523615 (1996-06-01), Cho et al.
patent: 5525857 (1996-06-01), Gnade et al.
patent: 5536965 (1996-07-01), Beratan et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5585136 (1996-12-01), Barrow et al.
patent: 5593495 (1997-01-01), Masuda et al.
patent: 5601869 (1997-02-01), Scott et al.
patent: 5643642 (1997-07-01), Oishi et al.
V.S. Klimenko, L.A. Kulik, and V.V. Vashchinskaya, Dependence of the Composition and Structure of Silicic Acid Xerogels on the Nature of the Solvent, 1986, Ukrainskii Khimicheskii Zhurnal, vol. 52, No. 12, pp. 1247-1251.
Norges Tekniske Hogskole, Preparation and Characterization of Transparent, Monolithic Silica Xerogels with Low Density, Jan. 1993. Cursory Consideration.
D. Basmadjian, G. N. Fulford, B.I. Parsons, and D.S. Montgomery, The Control of the Pore, Volume and Pore Size Distribution in Alumina and Silica Gels by the Addition of Water Soluble Organic Polymers Dec. 1962, Journal of Catalysis, vol. 1, No. 6, pp. 547-563. Cursory Consideration.
Siv Haereid, Preparation and Characterization of Transparent, Monolithic Silica Xerogels with Low Density, Jan. 1993, Norges Tekniske Hogskole Universiteteti I Trondheim.
H. Yokogawa, M. Yokoyama, Hydrophobic Silica Aerogels, Journal of Non-Crystalline Solids 186 (1995) 23-29.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Low volatility solvent-based method for forming thin film nanopo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low volatility solvent-based method for forming thin film nanopo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low volatility solvent-based method for forming thin film nanopo will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-78002

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.