Low variation resistor

Details Low variation resistor Low variation resistor

2008-08-26

2011-11-08

Lee, Kyung (Department: 2833)

Electrical resistors

Resistance value temperature-compensated

C338S333000, C327S563000, C327S513000, C323S313000

Reexamination Certificate

active

08054156

ABSTRACT:
This document discloses low variation resistor devices, methods, systems, and methods of manufacturing the same. In some implementations, a low-variation resistor can be implemented with a metal-oxide-semiconductor field-effect-transistor (“MOSFET”) operating in the triode (e.g., ohmic) region. The MOSFET can have a source that is connected to a reference voltage (e.g., ground) and a gate connected to a gate voltage source. The gate voltage source can generate a gate voltage that varies in proportion to changes in the temperature of an operating environment. The gate voltage variation can, for example, be controlled so that it offsets the changes in MOSFET resistance that are caused by changes in temperature. In some implementations, the gate voltage variation offsets the resistance variance by offsetting changes in transistor mobility that are caused by changes in temperature.

REFERENCES:
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patent: 4868482 (1989-09-01), O'Shaughnessy et al.
patent: 5345118 (1994-09-01), White et al.
patent: 5982201 (1999-11-01), Brokaw et al.
patent: 6388507 (2002-05-01), Hwang et al.
patent: 6400252 (2002-06-01), Smith et al.
patent: 7224210 (2007-05-01), Garlapati et al.

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