Low vacuum silicon thin film solar cell and method of production

Details Low vacuum silicon thin film solar cell and method of production Low vacuum silicon thin film solar cell and method of production

1985-12-17

1987-10-27

Pianalto, Bernard D.

Stock material or miscellaneous articles

Composite

Of metal

427 38, 427 451, 427 51, 427 74, 4272481, 427295, 427402, 428688, 428704, 437225, B05D 512

Patent

active

047029650

ABSTRACT:
A method and apparatus for producing thin film silicon solar cells by the deposition of successive passivation and silicon layers in a vacuum of low 10.sup.-4 to high 10.sup.-5 torr is disclosed. The method utilizes three principal sources: a semiconductor, gaseous ion and dopant. Evaporation at low vacuum is achieved by heating solid silicon indirectly in a crucible of refractory material or directly in a crucible of conductive material. Alternatively, the solid silicon can be heated indirectly with rf power. The gaseous plasma and dopant(s) are provided from suitable sources. The result is the deposition of semiconductor material and dopant in the presence of a gaseous plasma at low vacuum. The plasma eliminates contamination from the low vacuum.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4281208 (1981-07-01), Kuwano et al.

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