Low turn-on voltage, non-electron blocking double HBT structure

Details Low turn-on voltage, non-electron blocking double HBT structure Low turn-on voltage, non-electron blocking double HBT structure

2006-05-02

2006-05-02

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000

Reexamination Certificate

active

07038256

ABSTRACT:
A double heterojunction bipolar transistor structure having desirable properties of a low base-emitter turn-on voltage and no electron blocking discontinuities in the base-collector junction. These properties are achieved by selecting base, emitter and collector materials to provide a bandgap profile that exhibits abrupt transitions at the heterojunctions, such that both abrupt transitions are due to transitions in the valence band edge of the bandgap, but not in the conductive band edge of the bandgap.

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