Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure

Details Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure

1989-02-24

1990-07-24

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 16, 372 50, H01S 329

Patent

active

049439715

ABSTRACT:
A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium containing lead chalcogenide layers have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. Strontium, calcium or tin may be used in place of the europium. The buried laser and array are produced using a two-step molecular beam epitary method.

REFERENCES:
patent: 4608694 (1986-08-01), Partin
patent: 4612644 (1986-09-01), Partin
Kasemset et al., "Longitudinal Mode Behavior of PbSnTe Buried Heterostructure Laser", Appl. Phys. Lett., 30(11), Dec. 1, 1981, pp. 872-874.
Kasemset et al., "Pb.sub.1-x Sn.sub.x Te/PbTe.sub.1-y Se.sub.y Lattice-Matched Burial Heterostructure Lasers with CW Single Mode Output," Electronics Device Lett., vol. EDL-1, No. 5, May 1980, pp. 75-78.
Yoshikawa et al., "Continuous Operation Over 1500 H of a PbTe/PbSnTe Double-Heterostructure Laser at 77K," Appl. Phys. Lett., vol. 31, No. 10, Nov. 15, 1977, pp. 699-701.
Partin, "Lead-Europium -Selenide-Telluride Grown by Molecular Beam Epitaxy", Journal of Electronic Material, vol. 13, No. 3, 1984, pp. 493-504.
Partin et al., "Wavelength Coverage of Lead-Europium-Selenide-Telloride Diode Lasers," Appl. Phys. Lett., vol. 45, No. 3, Aug. 1, 1984, pp. 193-195.

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