Coherent light generators – Particular active media – Semiconductor
Patent
1990-11-21
1992-06-02
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 45, 372 50, 357 16, 437129, H01S 319
Patent
active
051193884
ABSTRACT:
A PbTe/PbEuSeTe buried quantum well diode laser and array and the method for making the same. The quantum well active region layer is buried between electrical and optical confinement regions which have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. The buried laser and array are produced using a two-step molecular beam epitaxy method.
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Feit Zeev
Kostyk Douglas
Woods Robert J.
Epps Georgia Y.
Laser Photonics, Inc.
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