Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1975-02-10
1977-08-09
Larkins, William D.
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
357 23, 357 41, 250211J, 29571, 29578, 307304, 307311, H01L 2714, H01L 3100, H01L 2978, H01L 2702
Patent
active
040415198
ABSTRACT:
A P-channel MOS double gated transistor is provided with an electrical shield element located between the drain and the second gate. The shield is electrically connected to the first gate and is dc biased by the first gate control voltage at FIRST GATE SELECT. The presence of the first gate control voltage causes all the shield capacitances to charge and causes a depletion region between the shield and the drain. Prior to SECOND GATE SELECT, the electrical transient effects of activating the shield with a dc bias have expired. SECOND GATE SELECT introduces new transients (noise current), noteable charging of the capacitance between the drain and the second gate and formation of the final section of depletion region proximate the second gate completing the P channel. This capacitance is drastically reduced by the intervening shield, and the depletion transient is minimized by the priming depletion region established by the shield voltage.
REFERENCES:
patent: 3436623 (1969-04-01), Beer
patent: 3657614 (1972-04-01), Cricchi
patent: 3845295 (1974-10-01), Williams et al.
patent: 3849678 (1974-11-01), Flynn
patent: 3877058 (1975-04-01), Cricchi
patent: 3906544 (1975-09-01), Engeler et al.
Hochberg, "FET Gate Structure," IBM Tech. Disclosure Bulletin, vol. 8, (10/65) p. 813.
Hentzel Paul
Larkins William D.
Munson Gene M.
LandOfFree
Low transient effect switching device and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low transient effect switching device and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low transient effect switching device and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1232492