Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including passive device
Reexamination Certificate
2007-10-23
2007-10-23
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including passive device
C438S332000, C438S381000, C438S382000
Reexamination Certificate
active
10905940
ABSTRACT:
Various methods of fabricating a high precision, silicon-containing resistor in which the resistor is formed as a discrete device integrated in complementary metal oxide semiconductor (CMOS) processing utilizing low temperature silicidation are provided. In some embodiments, the Si-containing layer is implanted with a high dose of ions prior to activation. The activation can be performed by the deposition of a protective dielectric layer, or a separate activation anneal. In another embodiment, a highly doped in-situ Si-containing layer is used thus eliminating the need for implanting into the Si-containing layer.
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Coolbaugh Douglas D.
Florkey John E.
Rassel Robert M.
Le Thao P.
Sabo, Esq. William D.
Scully , Scott, Murphy & Presser, P.C.
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