Low tolerance polysilicon resistor for low temperature...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including passive device

Reexamination Certificate

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C438S332000, C438S381000, C438S382000

Reexamination Certificate

active

10905940

ABSTRACT:
Various methods of fabricating a high precision, silicon-containing resistor in which the resistor is formed as a discrete device integrated in complementary metal oxide semiconductor (CMOS) processing utilizing low temperature silicidation are provided. In some embodiments, the Si-containing layer is implanted with a high dose of ions prior to activation. The activation can be performed by the deposition of a protective dielectric layer, or a separate activation anneal. In another embodiment, a highly doped in-situ Si-containing layer is used thus eliminating the need for implanting into the Si-containing layer.

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