Low threshold voltage diode-connected FET

Details Low threshold voltage diode-connected FET Low threshold voltage diode-connected FET

1998-09-28

2000-08-01

Grimm, Siegfried H.

Demodulators

Amplitude modulation demodulator

Input signal split into plural signals

257402, 326 34, 326 36, 329365, 455330, 455333, H03D 110

Patent

active

060972475

ABSTRACT:
A diode device with a low or negligible threshold voltage includes at least one field effect transistor, the gate of the field effect transistor being connected to the drain of the field effect transistor. The threshold voltage of the diode device is approximately of the same magnitude as the potential of the gate of the field effect transistor forming part of the diode device.

REFERENCES:
patent: 4410902 (1983-10-01), Malik
patent: 4418292 (1983-11-01), Cserhalmi et al.
patent: 4839709 (1989-06-01), Zurakowski
patent: 5298807 (1994-03-01), Salmon et al.
patent: 5339272 (1994-08-01), Tedrow et al.
patent: 5475245 (1995-12-01), Kudo et al.
patent: 5550699 (1996-08-01), Diaz
patent: 5805500 (1998-09-01), Campardo et al.

Affiliated with

Also associated with

Rating

Low threshold voltage diode-connected FET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low threshold voltage diode-connected FET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low threshold voltage diode-connected FET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-667729