Low-threshold high-efficiency laser diodes with aluminum-free ac

Details Low-threshold high-efficiency laser diodes with aluminum-free ac Low-threshold high-efficiency laser diodes with aluminum-free ac

1996-11-01

1999-03-30

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

058898050

ABSTRACT:
Semiconductor diode lasers include an aluminum free active region including at least one active layer having a general composition In.sub.(1-x) Ga.sub.x As.sub.y P.sub.(1-y) where 0.ltoreq.y.ltoreq.1; two confinement layers bounding the active region and having a general composition In.sub.(1-x) (Ga.sub.(1-z) Al.sub.z)x P wherein aluminum content z may be zero; and a lower cladding layer, and at least one upper cladding layer adjacent the confinement layers. The cladding layers have the same general composition as the adjacent confinement layer, but always have a finite aluminum content. The aluminum content of the cladding layers is selected such that the cladding layers have a energy bandgap greater than the energy bandgap of the confinement layers.

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