Low threshold current laser

Details Low threshold current laser Low threshold current laser

1991-05-03

1992-12-15

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

051723840

ABSTRACT:
A thin layer, typically a monolayer, of a small band gap material (37) is inserted into the active layer (14) of a quantum well semiconductor device (36, 51). The band gap of the thin layer (37) is smaller than the band gap of the material in the active layer (14), thereby shifting carrier concentrations in the quantum well (26d, 26e, 26h, 26n) of the active layer (14) toward the thin layer (37). This shift increases alignment between the electron wave function (42, 54) and the hole wave function (44, 57) in the quantum well (26d, 26e, 26h, 26n) which increases the probability of stimulated photon emissions thereby reducing the threshold current and threshold voltage of the quantum well semiconductor device (36, 51).

REFERENCES:
patent: 5081634 (1992-01-01), Weisbuch et al.
T. R. Chen et al., "Submilliamp Threshold InGaAs-GaAs Strained Layer Quantum Well Laser" IEEE Journal of Quantum Electronics, vol. 26, No. 7, Jul. 1990, pp. 1183-1190.
R. M. Kolbas, "Laser Properties and Carrier Collection in Ultrathin Quantum-Well Heterostructures", IEEE Journal of Quantum Electronics, vol. 20, No. 1, Jan. 1990, pp. 25-31.

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