Low threshold BiCMOS circuit

Details Low threshold BiCMOS circuit Low threshold BiCMOS circuit

1991-04-18

1992-07-21

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307570, H03K 1901

Patent

active

051325675

ABSTRACT:
A BiCMOS NAND circuit is disclosed employing low threshold n-channel FET transistors in conjunction with standard threshold n-channel FET transistors and standard threshold p-channel FET transistors. Circuit performance is maintained as the circuit devices are scaled to physically smaller FET devices and reduced power supply voltage. Furthermore, the circuit is interface compatible with standard CMOS circuits.

REFERENCES:
patent: 4616146 (1986-10-01), Lee et al.
patent: 4694203 (1987-09-01), Uragami et al.
patent: 4719373 (1988-01-01), Masuda et al.
patent: 4733110 (1988-03-01), Hara et al.
patent: 4808850 (1989-02-01), Masuda et al.
patent: 4845385 (1989-07-01), Ruth, Jr.
patent: 4851713 (1989-07-01), Lee
patent: 4890017 (1989-12-01), Masuda et al.
patent: 4926069 (1990-05-01), Yamazaki
patent: 4985645 (1991-01-01), Tsutsui
patent: 4999523 (1991-03-01), Cham et al.
patent: 5027009 (1991-06-01), Urakawa et al.
patent: 5034628 (1991-07-01), Matsuzawa et al.
patent: 5047669 (1991-09-01), Iwamura et al.
patent: 5059821 (1991-10-01), Murabayashi et al.

Affiliated with

Also associated with

Rating

Low threshold BiCMOS circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low threshold BiCMOS circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low threshold BiCMOS circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-845758