Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Graded composition
Reexamination Certificate
2005-03-08
2005-03-08
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Graded composition
C438S037000, C438S087000
Reexamination Certificate
active
06864115
ABSTRACT:
A semiconductor structure and method of processing same including a substrate, a lattice-mismatched first layer deposited on the substrate and annealed at a temperature greater than 100° C. above the deposition temperature, and a second layer deposited on the first layer with a greater lattice mismatch to the substrate than the first semiconductor layer. In another embodiment there is provided a semiconductor graded composition layer structure on a semiconductor substrate and a method of processing same including a semiconductor substrate, a first semiconductor layer having a series of lattice-mismatched semiconductor layers deposited on the substrate and annealed at a temperature greater than 100° C. above the deposition temperature, a second semiconductor layer deposited on the first semiconductor layer with a greater lattice mismatch to the substrate than the first semiconductor layer, and annealed at a temperature greater than 100° C. above the deposition temperature of the second semiconductor layer.
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AmberWave Systems Corporation
Nelms David
Nguyen Thinh T
Testa Hurwitz & Thibeault LLP
LandOfFree
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