Low thermal resistance, low stress semiconductor package

Details Low thermal resistance, low stress semiconductor package Low thermal resistance, low stress semiconductor package

1979-03-19

1981-07-14

James, Andrew J.

Metal fusion bonding

Process

Critical work component, temperature, or pressure

357 72, 357 79, 357 80, 357 68, 228122, H01L 2302, H01L 2328, H01L 2342

Patent

active

042789907

ABSTRACT:
A semiconductor device having especially low thermal impedance between a semiconductor element and a heatsink is described wherein the semiconductor element is directly disposed upon a thin, low thermal impedance current-spreading layer on an electrically isolated layer. An electrode connected to the current-spreading layer surrounds the semiconductor element so that it introduces no additional thermal impedance between the semiconductor element and the heatsink. Relatively inexpensive electrode materials may be used in accordance with the invention without increasing thermal impedance.

REFERENCES:
patent: 3089067 (1963-05-01), Biard
patent: 3699402 (1972-10-01), McCann et al.
patent: 3783347 (1974-01-01), Vladik
patent: 3918084 (1975-11-01), Schierz
patent: 3994430 (1976-11-01), Cusano et al.
patent: 4009485 (1977-02-01), Koenig
patent: 4047197 (1977-09-01), Schierz
patent: 4115837 (1978-09-01), Beall et al.

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