Low temperature wafer backside cleaning

Details Low temperature wafer backside cleaning Low temperature wafer backside cleaning

2007-04-03

2007-04-03

MacArthur, Sylvia R. (Department: 1763)

Coating apparatus

Gas or vapor deposition

C118S7230AN, C156S345230

Reexamination Certificate

active

11075676

ABSTRACT:
A ring is provided that, together with a wafer, separates a processing chamber into an upper portion and a lower portion so that one side of the wafer, such as the backside, can be cleaned or otherwise processed with little or no interaction to the frontside of the wafer. The wafer sits on pins extending from a plate so that processor cleaning gases can contact the surface of the wafer backside. In one embodiment, the ring is conductive, with an inner insulating ring, and the place is also conductive. The conductive plate and ring act as electrodes for plasma generation underneath the wafer.

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