Low temperature tunneling transistor

Details Low temperature tunneling transistor Low temperature tunneling transistor

1984-09-27

1987-03-03

Edlow, Martin H.

357 232, 357 22, 357 4, 357 15, 357 28, H01L 2978

Patent

active

046479546

ABSTRACT:
The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (some meV) through which charge carriers can tunnel under the influence of an applied drain voltage. The tunnel current can be controlled by a gate voltage V.sub.G which modifies the barrier height between source and drain thereby changing the tunnel probability.

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