Low temperature tunneling transistor

Details Low temperature tunneling transistor Low temperature tunneling transistor

1985-11-15

1987-06-23

James, Andrew J.

357 5, 357 6, 357 231, 357 2315, 357 16, 357 83, H01L 2912, H01L 2980, H01L 2966

Patent

active

046757112

ABSTRACT:
The transistor comprises two electrodes, (source (22) and drain (23), with a semiconductor tunnel channel (21A, 21B) arranged therebetween. A gate (24) for applying control signals is coupled to the channel. The semiconductor channel consists of a plurality of regions differing in their current transfer characteristics: contact regions (21c), connected to the source and drain electrodes, and a tunneling region (21t) arranged between the contact regions. The energy of free carriers in the contact regions differs from the energy of the conduction band or the valence band of the tunneling region which forms a low energy tunnel barrier the height (.DELTA.E) of which can be modified by control signals applied to the gate. The operating temperature of the device is kept sufficiently low to have the tunnel current through the barrier outweigh currents of thermionically excited carriers.

REFERENCES:
patent: 4583105 (1986-04-01), Rosenberg

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