Low temperature thin films formed from nanocrystal precursors

Details Low temperature thin films formed from nanocrystal precursors Low temperature thin films formed from nanocrystal precursors

1991-11-22

1993-11-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 437234, H01L 2100, H01L 2102, H01L 21469

Patent

active

052623572

ABSTRACT:
Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.

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Hahn et al., Phys. Rev. Lett. (1988) 61(10):1190-1193.
Sheng et al., J. Phys. (1981) C 14:L565-L569.
Berry et al., Phys. Rev. A (1984) 30(2):919-931.
Honeycutt et al., J. Phys. Chem. (1987) 91:4950-4963.
Olshavsky et al., J. Amer. Chem. Soc. (1990) 112:9438-9439.

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