Low temperature synthesis of semiconductor fibers

Details Low temperature synthesis of semiconductor fibers Low temperature synthesis of semiconductor fibers

2007-07-10

2007-07-10

Johnson, Edward M. (Department: 1754)

Chemistry of inorganic compounds

Silicon or compound thereof

C423S326000

Reexamination Certificate

active

11515051

ABSTRACT:
This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for example, a silicon substrate covered with gallium droplets is exposed to a microwave plasma containing atomic hydrogen. A range of process parameters such as microwave power, pressure, inlet gas phase composition, were used to synthesize silicon nanowires as small as 4 nm (nanometers) in diameter and several micrometers long. As opposed to the present technology, the instant technique does not require creation of quantum sized liquid metal droplets to synthesize nanowires. In addition, it offers advantages such as lower growth temperature, better control over size and size distribution, better control over the composition and purity of the nanowires.

REFERENCES:
patent: 6806228 (2004-10-01), Sharma et al.

Affiliated with

Also associated with

Rating

Low temperature synthesis of semiconductor fibers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low temperature synthesis of semiconductor fibers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature synthesis of semiconductor fibers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3772148