Low temperature synthesis of high purity monoclinic celsian

Details Low temperature synthesis of high purity monoclinic celsian Low temperature synthesis of high purity monoclinic celsian

1990-09-13

1991-08-20

Dixon, Jr., William R.

Compositions: ceramic

Ceramic compositions

Refractory

501128, 423328, 423600, 423637, 423331, C04B 3518

Patent

active

050414003

ABSTRACT:
A process for preparing monoclinic celsian from AlF.sub.3, Al.sub.2 O.sub.3, BaCO.sub.3, and fused SiO.sub.2 powders by heating an intimate mixture of the powders (1) at from about 700.degree. to 900.degree. C. to form topaz and then (2) at a temperature as low as 900.degree. C. to produce monoclinic celsian. The reactions take place in an atmosphere of the gases generated by the reactions.

REFERENCES:
patent: 4018614 (1977-04-01), Nordlie
patent: 4994419 (1991-02-01), Talmy et al.
Chemical Abstract-"Investigation of Phase Formation During Celsian Synthe" Pavlova et al., Higher Inst. Chem. Technology, Sofia 1156, Bulgaria, Dokl Bolg. Akad. Nauk, 34 (2), pp. 185-188.
Dialog Abstract-SU1018927 (5/23/83) "Ceramic Refractory Material Prepn. by Mixing Monolithic Celsian and Modifier Contg. Oxide of Barium, Aluminum and Silicon in Prescribed Properties", Kharitonov et al.

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