Low temperature sintering ceramic composition for use in...

Compositions: ceramic – Ceramic compositions – Refractory

Reexamination Certificate

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C501S122000, C428S210000

Reexamination Certificate

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10540014

ABSTRACT:
A low temperature sintering ceramic composition that can be sintered at a temperature equal to or less than 1000° C. and has low dielectric constant and dielectric loss in a high frequency region of 17 Ghz or more, an electronic component using the same and a method of fabricating the low temperature sintering ceramic are provided. The composition comprises MgO and SiO2in sum total in the range of from 64.0 to 99.2% by mass; Bi2O3in the range of from 0.4 to 33.0% by mass; Li2O in the range of from 0.4 to 3.0% by mass; and MgO and SiO2are contained in the molar ratio of from 2:1 to 2:3.5, at least part thereof being contained as a complex oxide of Mg and Si.

REFERENCES:
patent: 5763059 (1998-06-01), Yamaguchi et al.
patent: 6232251 (2001-05-01), Terashi et al.
patent: 6333429 (1994-12-01), None
patent: 7033516 (1995-02-01), None
patent: 20000307661 (2000-02-01), None
patent: 2001240470 (2001-09-01), None
patent: 2002173367 (2002-06-01), None
patent: 2003238235 (2003-08-01), None
patent: 2004115295 (2004-04-01), None
Machine translation of 2003238235, publication date Aug. 27, 2003.

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