Low temperature sintering ceramic composition for high...

Compositions: ceramic – Ceramic compositions – Refractory

Reexamination Certificate

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C501S122000, C428S701000, C428S702000

Reexamination Certificate

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10548380

ABSTRACT:
A low temperature sintering ceramic composition can be sintered at 850 to 1,000° C., and the sintered ceramic has a low dielectric constant (9 or less at 16 Ghz or more) and a high Qf (10,000 or more). The composition can be co-sintered with wiring material containing Ag, Au, or Cu. The ceramic composition includes (by mass) CaO, MgO, and SiO2in total: over 60% to 98.6%; Bi2O3: from 1% to under 35%; and Li2O: from 0.4% to under 6%; wherein (CaO+MgO) and SiO2are contained in the molar ratio of from 1:1 to under 1:2.5.

REFERENCES:
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patent: 2003 63857 (2003-03-01), None
patent: 2003 226572 (2003-08-01), None
patent: 2003238235 (2003-08-01), None
patent: 2004115295 (2004-04-01), None

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