Low-temperature sintered barium titanate microwave...

Details Low-temperature sintered barium titanate microwave... Low-temperature sintered barium titanate microwave...

2007-07-10

2007-07-10

Group, Karl (Department: 1755)

Compositions: ceramic

Ceramic compositions

Titanate, zirconate, stannate, niobate, or tantalate or...

C501S138000, C501S139000, C428S210000, C428S701000, C428S702000

Reexamination Certificate

active

11066303

ABSTRACT:
The present invention relates to a low-temperature sintered barium titanate microwave dielectric ceramic material. The host matrix thereof can be represented by BaxTiyMzOx+2y+k, where x is 1˜6, y is 1˜17, z is 0˜1, k is 0˜3, M is an element substituting the Ba or Ti ion, for example selected from an alkali metal, an alkaline-earth metal, a transition group or a rare earth group, and preferably Ba2Ti9O20or the host matrix containing Zr, Sn, Zn, etc. According to the present invention, a low melting glass is added and a subsequent milling operation is performed to reduce the sintering temperature of the microwave dielectric ceramic material to less than 1,000° C. The low melting glass can be for example the Ba—B—Si—Li glass, Ba—B—Zn—Si—Li glass, Ba—B—Si—Li—Cu glass or Cu—B—Zn—Si—Li glass.

REFERENCES:
patent: 6107228 (2000-08-01), Sugimoto et al.
patent: 6458734 (2002-10-01), Sugimoto et al.
patent: 6613705 (2003-09-01), Feltz et al.
patent: 6613706 (2003-09-01), Hagiwara et al.
patent: 2005/0095464 (2005-05-01), Lee et al.
patent: 2006/0035094 (2006-02-01), Kozuka et al.

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