Low temperature-sinterable dielectric composition and thick film

Details Low temperature-sinterable dielectric composition and thick film Low temperature-sinterable dielectric composition and thick film

1980-03-26

1981-12-29

Goldberg, Elliot A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

501 10, 501136, H01G 412

Patent

active

043085717

ABSTRACT:
A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2, wherein 0.005.ltoreq..times..ltoreq.0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25.degree. C., a dissipation factor (tan .delta.) of not more than 5% at 25.degree. C., and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.

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Krainik et al., "Antiferroelectric and Ferroelectric Properties of Certain Solid Solutions Containing Pb.sub.2 MgWO.sub.6 ", Soviet Physics-Solid State, vol. 2, pp. 63-65, 1960.
Agranovskaya, A. I., "Physical-Chemical Investigation of the Formation of Complex Ferroelectrics with the Perovskite Structure", Akad. Nauk., Phys. Series, pp. 1271-1277 (1960).

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