Low temperature sinterable dielectric ceramic composition...

Details Low temperature sinterable dielectric ceramic composition... Low temperature sinterable dielectric ceramic composition...

2005-02-01

2005-02-01

Group, Karl (Department: 1755)

Compositions: ceramic

Ceramic compositions

Titanate, zirconate, stannate, niobate, or tantalate or...

C361S321400

Reexamination Certificate

active

06849567

ABSTRACT:
A low temperature sinterable dielectric ceramic composition and a multilayer ceramic chip capacitor. The dielectric ceramic composition is expressed by the general formula: aBaTiO3-bMgCO3-cY2O3-dCr2O3-eV2O5-f(xZrO2-y(K,Li)2O-zSiO2) (x+y+z=1; 0.05≦x≦0.18, 0.01≦y≦0.08, and 0.7.4≦z≦0.93); in which a, b, c, d, e and f are molar ratios; a=100, 1.0≦b≦2.0, 0.2≦c≦2.0, 0.02≦d≦0.3, 0.02≦e≦0.3, and 0.5≦f<2. The multilayer ceramic chip capacitor is prepared using the dielectric ceramic composition. The dielectric composition according to the present invention can be sintered at a low temperature without decrease of a dielectric constant, making it possible to make ultra thin-layered dielectrics.

REFERENCES:
patent: 5403797 (1995-04-01), Ohtani et al.
patent: 6243254 (2001-06-01), Wada et al.
patent: 6777363 (2004-08-01), Park et al.
Abstract—Japanese Patent No. JP2000311828, Published Nov. 7, 2000.

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