Low-temperature silicon nitride deposition

Details Low-temperature silicon nitride deposition Low-temperature silicon nitride deposition

2006-10-24

2006-10-24

Meeks, Timothy (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255260, C427S255230, C427S248100, C427S255394, C427S255393

Reexamination Certificate

active

07125582

ABSTRACT:
A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.

REFERENCES:
patent: 6277200 (2001-08-01), Xia et al.

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