Low temperature silicon epitaxy with germanium doping

Details Low temperature silicon epitaxy with germanium doping Low temperature silicon epitaxy with germanium doping

1993-05-27

1994-10-25

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437106, 437131, 437108, H01L 2100

Patent

active

053588959

ABSTRACT:
A non-strained epitaxial layer is formed to have a small transition width and a low amount or no amount of oxygen incorporated therein. During the formation of non-strained epitaxial layer, a germanium source gas is introduced. Germanium reacts with water and/or oxygen to form GeO, which sublimates from the surface of the non-strained epitaxial layer, instead of oxygen being incorporated into the lattice. Thus, a low temperature epitaxial process can be used to obtain the small transition width without having oxygen incorporated into the non-strained epitaxial layer.

REFERENCES:
patent: 4564509 (1986-01-01), Shealy et al.
patent: 5097308 (1992-03-01), Salih
patent: 5120394 (1992-06-01), Mukai
patent: 5216271 (1993-06-01), Takagi
patent: 5227330 (1993-07-01), Agnello
patent: 5256550 (1993-10-01), Laderman
patent: 5684411 (1992-01-01), Laderman
J. L. Hoyt et al., "Limited Reaction Processing: Growth of Si.sub.1-x Ge.sub.x /Si for Heterojunction Bipolar Transistor Applications," Thin Solid Films, 184(1990)93 106, pp. 93.106.
T. I. Kamins et al., "Electrical Characteristics of Diodes Fabricated in Selective Si/Si.sub.1-x Ge.sub.x Epitaxial Layers", Journal of Electronic Materials, vol. 21, No. 8, 1992, pp. 817-824.
Marco Racanelli et al., "Ultrahigh-Vacuum CVD Epitaxy of Silicon and Ge.sub.x Si.sub.1-x ", JOM, Oct. 1991, pp. 32-37.
Raymond P. Roberge et al., "Gaseous Impurity Effects in Silicon Epitaxy", 1986 Union Carbide Corporation and Gemini Research, Incorporated, pp. 111-121.
J. Bloem, "The Effect of Trace Amounts of Water Vapor on Boron Doping in Epitaxially Grown Silicon", J. Electrochem. Soc. vol. 118, No. 11, publication date unknown, pp. 837-1841.
Kohetsu Tanno et al., "Selective Silicon Epitaxy Using Reduced Pressure Technique", Japanese Journal of Applied Physics, vol. 21, No. 9, Sep., 1982, pp. L564-L566.
S. P. Weeks, "Pattern Shift and Pattern Distortion During CVD Epitaxy on (111) and (100) Silicon", Solid State Technology, Nov. 1981, pp. 111-117.
T. O. Sedgwick et al., "Growth of Facet-Free Selective Silicon Epitaxy at Low Temperature and Atmospheric Pressure", J. Electrochem. Soc., vol. 138, No. 10, Oct. 1991, pp. 3042-3047.
John C. Beam, "Strained-Layer Epitaxy of Germanium-Silicon Alloys", Science, 11 Oct. 1985, vol. 230, No. 4722, pp. 127-131.
A. Yamada et al., "Gas Source Molecular-Beam Epitaxy of Si and GiGe Using Si.sub.2 H.sub.6 and GeH.sub.4 ", J. Appl. Phys. 69(2), 15 Jan. 1991, pp. 1008-1012.
Rozgonyi, Kola; "Defect Engineering for ULSI Epitaxial Silicon Solid State Data B", Solid State Phenom.

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