Low temperature semiconductor bonding process with chemical vapo

Fishing – trapping – and vermin destroying

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437209, 437943, H01L 21268, H01L 2158

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active

050100360

ABSTRACT:
A semiconductor chip (14) is bonded to a substrate (16) by a metallic molecular bond interface (28, 38, 30). The chip and the substrate are separated by a gap (18), and a metal-bearing gas is introduced in the gap. A thermal energy source (22) directs a focused energy beam (24) into the gap to thermally decompose the gas by chemical vapor reaction to deposit and grow metal to provide a metallic molecular bond interface filling the gap and bonding the chip to the substrate. In the preferred embodiment, one of the chip and substrate has a passband passing the wavelength of the focused beam to be transparent thereto such that the beam passes therethrough and into the gap and against the other of the chip and the substrate.

REFERENCES:
patent: 4483725 (1984-11-01), Chang
patent: 4569855 (1986-02-01), Matsuda et al.
"Laser-Direct-Writing Processes: Metal Deposition, Etching, and Applications to Microcircuits", Jerry G. Black et al., J. Vac. Sci. Technol. B 5(1), Jan./Feb. 1987, pp. 419-422.
"On the Applications of Laser-Direct-Writing Techniques, to GaAs Monolithic Microwave Integrated Circuits", C. L. Chen et al., GaAs IC Symposium, IEEE 1987, pp. 167-170.
"Selective Electroless Metal Deposition for Integrated Circuit Fabrication", Chiu H. Ting et al., J. Electrochem. Soc., Vo. 136, No. 2, Feb. 1989, pp. 456-462.

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