Low temperature seeding process for ferroelectric memory device

Details Low temperature seeding process for ferroelectric memory device Low temperature seeding process for ferroelectric memory device

1994-08-29

1998-10-06

Garrett, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 84, 4274192, 4271263, C30B 2506

Patent

active

058171703

ABSTRACT:
A process for producing a ferroelectric lead zirconate titanate dielectric for a semiconductor device by applying a lead titanate seeding layer to a substrate before applying the lead zirconate titanate film, and a semiconductor device produced in accordance with the process. The lead titanate seeding layer allows the subsequent lead zirconate titanate to be annealed at a significantly lower seeding temperature, to lessen interdiffusion among the films, electrodes and substrate and to lessen thermal stresses.

REFERENCES:
patent: 4844727 (1989-07-01), Ohya et al.
patent: 5198269 (1993-03-01), Swartz et al.
patent: 5431958 (1995-07-01), Desu et al.

Affiliated with

Also associated with

Rating

Low temperature seeding process for ferroelectric memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low temperature seeding process for ferroelectric memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature seeding process for ferroelectric memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-73701