Low temperature reaction bonding

Details Low temperature reaction bonding Low temperature reaction bonding

1993-12-03

1995-06-27

Barry, Chester T.

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

156281, 1562739, 148DIG22, 427539, 427573, B32B 3100

Patent

active

054276381

ABSTRACT:
A method for reaction bonding surfaces at low temperatures in which polished and cleaned surfaces are bombarded with a mixture of oxygen and fluorine ions to produce activated surfaces. The activated surfaces are then cleaned to remove particulates, then contacted at room temperature to affect a reaction bond therebetween. The bond energy of the reaction bonded surfaces increase with time at room temperature. The rate at which the bond energy of the reaction bonded surfaces increases may be enhanced by moderate heating at a low temperature below a temperature which would be detrimental to any part of the reaction bonded structure. A satisfactory bond energy for silicon wafers can be achieved in four hours at room temperature and in less than 10 minutes at 50.degree. C.

REFERENCES:
patent: H1164 (1993-04-01), Wade, Jr. et al.
patent: 3679985 (1972-07-01), Fang et al.
patent: 4170662 (1979-10-01), Weiss et al.
patent: 4274483 (1981-06-01), Cottone et al.
patent: 4345985 (1982-08-01), Tohda et al.
patent: 4457972 (1984-07-01), Griffith et al.
patent: 4458346 (1984-07-01), Mitsuyu et al.
patent: 4547432 (1985-10-01), Pitts et al.
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4765860 (1988-08-01), Ueno et al.
patent: 4824008 (1989-04-01), Luszcz et al.
patent: 4849247 (1989-07-01), Scanlon et al.
patent: 4884737 (1989-12-01), Newkirk et al.
patent: 4886681 (1989-12-01), Clabes et al.
patent: 4917843 (1990-04-01), Gyarmati et al.
patent: 4957771 (1990-09-01), Enloe
patent: 4960736 (1990-10-01), Luxzcz et al.
patent: 4983251 (1991-01-01), Haisma et al.
patent: 5008723 (1991-04-01), van der Have
patent: 5010036 (1991-04-01), Calviello et al.
patent: 5232870 (1993-08-01), Ito et al.
Lasky et al., Silicon-On-Insulator (SOI) by Bonding and Etch-Back, Proceedings of 1985 IEDM 684.
J. B. Lasky, Wafer Bonding for Silicon-on-Insulator Technologies, Jan. 1986, Applied Physics Letters 48, pp. 78-80.
W. P. Maszara, et al, "Bonding of Silicon Wafers for Silicon-on-Insulator", Nov. 1988, J. Applied Physics, pp. 4943-4950.
Rossnagle, S. M. ed Handbook of Plasma Processing Technology Noyes Publications, Park Ridge, N.J. (1990) pp. 206-215.
G. G. Goetz "Generalized Reaction Bonding" The First International Symposium on Semiconductor Wafer Bonding Science, Technology and Applications--Oral Presentation Nov. 14, 1991.

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