Low temperature proton conducting oxide devices

Details Low temperature proton conducting oxide devices Low temperature proton conducting oxide devices

2005-06-24

2008-08-19

Hendrickson, Stuart (Department: 1793)

Compositions

Electrically conductive or emissive compositions

Metal compound containing

C252S500000, C252S520200, C252S521100, C252S521200, C429S010000, C429S006000, C429S006000, C429S047000, C429S047000, C423S594130, C423S606000, C204S421000, C204S430000, C204S295000, C204S265000, C095S054000, C096S004000, C096S011000, C205S788000, C205S783000

Reexamination Certificate

active

07413687

ABSTRACT:
A device for conducting protons at a temperature below 550° C. includes a LAMOX ceramic body characterized by an alpha crystalline structure.

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Georges et al, “Thermal, structural and transport properties of the fast oxide-ion conductors La2-xRxMo2O9, (R=Nd,Gd, Y),” Solid State Ionics, 2003, V161, pp. 231-241.
Lacorre et al, “New Oxide Ion Conductors based on La2Mo2O9,” Abstract No. K-IX-1, Symposium-K, Solid state ionics: high temperature vs. low temperature defect chemistry, European Materials Research Socieety, Strasbourg, France, May 24-28, 2004.
Goutenoire et al, “Structural and transport characteristics of the LAMOX family of fast-ion conductors, based on lantanum molybdenum oxide La2Mo2O9,” J. Matl. Chem. 2001, 11, 119-124.
Lacorre et al, “Designing fast oxide-ion conductors based on La2Mo2O9,” Nature, 2000, V404, 856-858.
P. Lacorre, et al., “Designing fast oxide-ion conductors based on La2Mo2O9,” Nature, 2000, pp. 856-858, vol. 404.

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