Low temperature process for producing indium-containing semicond

Details Low temperature process for producing indium-containing semicond Low temperature process for producing indium-containing semicond

1993-02-25

1994-09-13

King, Roy V.

Fishing, trapping, and vermin destroying

437126, 4272552, 4272551, 427255, 427314, 148DIG65, H01L 2120, C23C 1600

Patent

active

053468520

ABSTRACT:
Chemical vapor deposition process for producing indium-containing semiconductor materials, particularly III/V indium-containing semiconductor materials, using triisopropylindium as the source of indium. In the process a flow of triisopropylindium and a flow of a group V source or precursor, e.g. AsH.sub.3, are directed into a reactor in contact with a heated substrate. The triisopropylindium and group V precursor are at least partially decomposed, depositing by chemical vapor deposition an indium-containing III/V semiconductor material on the substrate. The result is lower pyrolysis temperatures and less carbon impurity incorporation into the indium-containing semiconductor material than when commercially available indium sources are used.

REFERENCES:
patent: 4533410 (1985-08-01), Ogura et al.
patent: 5213654 (1993-05-01), Sasaki et al.
Chen et al, "Triisopropylindium for OMVPE Growth," Journal of Crystal Gro 124 (1992) pp. 88-92.

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