Low temperature process for producing antimony-containing semico

Details Low temperature process for producing antimony-containing semico Low temperature process for producing antimony-containing semico

1991-07-08

1994-01-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437104, 437107, 437971, 148DIG5, 148DIG110, H01L 2120, H01L 2136

Patent

active

052759660

ABSTRACT:
Tri-isopropylantimony is used as a source of antimony in chemical vapor deposition production of semiconductor materials. The process can be used to introduce antimony as a dopant into III/V and II/VI semiconductor materials.

REFERENCES:
patent: 5104825 (1992-04-01), Takikawa
Stringfellow; "Organometallic Vapor Phase Epitaxy: Theory and Practice"; demic Press (1989); pp. 15-53.
Stauf et al "Low Temperature Organometallic Vapor Phase Epitaxy of InSb Using the Novel Sb Precursor Triisopropylantimony" App. Phys. Lett., 58 (12) 25 Mar. 1991.
Chen et al "Triisopropylantimony for Organometallic Vapor Phase Epitaxial Growth of GaSb and InSb", App. Phys. Lett. 58(22) 3 Jun. 1991.
Hoke et al "Metalorganic Growth of CdTe and HgCdTe Epitaxial Films at a Reduced Substrate Temperature Using Diisopropyltelluride" App. Phys. Lett., 46, (4) 15 Feb. 1985.
Chen et al, J. App. Phys. vol. 69, No. 11, pp. 7605-7611, 1 Jun. 1991.

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