Low temperature process for laser dehydrogenation and crystalliz

Details Low temperature process for laser dehydrogenation and crystalliz Low temperature process for laser dehydrogenation and crystalliz

1993-06-07

1994-11-22

Thomas, Tom

Fishing, trapping, and vermin destroying

437 2, 437 4, 437 19, 437907, 148DIG90, 148DIG93, H01L 2126

Patent

active

053669266

ABSTRACT:
A low temperature process for dehydrogenating amorphous silicon using lasers. Dehydrogenation occurs by irradiating one or more areas of a hydrogenated amorphous silicon layer with laser beam pulses at a relatively low energy density. After the multiple laser pulse irradiation at a relatively low energy density, the laser energy density is increased and multiple irradiation at a higher energy density is performed. If after the multiple irradiation at the higher energy density the amorphous silicon hydrogen content is still too high, dehydrogenation proceeds by multiple irradiations at a yet higher energy density. The irradiation at the various energy densities can result in the formation of polysilicon due to melting of the amorphous silicon layer. As irradiation may be selectively applied to the amorphous silicon, an integral amorphous silicon-polysilicon structure may be formed.

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