Metal treatment – Compositions – Heat treating
Patent
1983-10-20
1985-06-11
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29576T, 357 30, 357 91, 148187, H01L 21263
Patent
active
045226571
ABSTRACT:
Disclosed is a low temperature technique for annealing implantation damage and activating dopants. Conventional furnace annealing requires temperatures as high as 1000.degree. to 1100.degree. C. to completely anneal the dopant implantation damage; 75 KeV arsenic implantation followed by 550.degree. C. for 75 minutes and 900.degree. C. for 30 minutes in nitrogen for instance is not sufficient to anneal the implantation damage and results in a leakage current of the order of 1 mA per cm.sup.2. If, however, subsequent to the arsenic implantation, 0.4 KeV hydrogen ions are implanted using a Kaufman ion source with an accelerator current of 200 milliamp, then only 500.degree. to 600.degree. C. for one hour anneal in nitrogen is sufficient to eliminate the arsenic implantation damage. This results in a leakage current of the order of 5 to 25 nA per cm.sup.2 and a complete dopant activation is achieved.
REFERENCES:
patent: 3589949 (1971-06-01), Nelson
patent: 3982967 (1976-09-01), Ku et al.
patent: 4047976 (1977-09-01), Bledsoe et al.
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4266986 (1981-05-01), Benton et al.
patent: 4364779 (1982-12-01), Kamgar et al.
patent: 4368083 (1983-01-01), Bruel et al.
Ohmura et al., Phys. Stat. Sol., 15a (1973) 93.
IEEE Transactions on Electron Devices, vol. ED-22, No. 8, Aug. 1975, Current Gain Recovery in Silicon Nitride Passivated Planar Transistors by Hydrogen Implantation-Walter Kellner and Adolf Goetzberger.
Journal of Vacuum Science Technology, 20(3), Mar. 1982, Passivation of Grain Boundaries in Silicon-C. H. Seager, D. J. Sharp, and J. K. G. Panitz.
Fonash Stephen J.
Gigante Joseph R.
Rai-Choudhury Prosenjit
Rohatgi Ajeet
Singh Ranbir
Petrow Joel
Roy Upendra
Westinghouse Electric Corp.
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