Low temperature, pressureless sintering of silicon nitride

Compositions: ceramic – Ceramic compositions – Refractory

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501 98, 264 65, C04B 3558

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active

053766024

ABSTRACT:
A silicon nitride-based powder composition that yields sintered bodies having a density of at least 3.15 g/cm.sup.3 by pressureless sintering. The composition includes silicon nitride and an amount of bismuth oxide as a phase transition aid in addition to magnesium oxide, aluminum oxide, zirconium oxide and, optionally, silicon dioxide. The sintered bodies can be produced at temperatures of 1650.degree. C. or less.

REFERENCES:
patent: 3953221 (1976-04-01), Lange
patent: 4070198 (1978-01-01), Chyung et al.
patent: 4264547 (1981-04-01), de Pous
patent: 4280973 (1981-07-01), Moskowitz et al.
patent: 4443394 (1984-04-01), Ezis
patent: 4558018 (1985-12-01), Matsuhiro et al.
patent: 4615990 (1986-10-01), Richon et al.
patent: 4640903 (1987-02-01), Matsuhiro et al.
patent: 4680742 (1987-07-01), Yamada et al.
patent: 4692420 (1987-09-01), Oda et al.
patent: 4696778 (1987-09-01), Neil
patent: 4880756 (1989-11-01), Urashima et al.
patent: 4883776 (1989-11-01), Pyzik et al.
Das et al., "Sintering and Properties of Silicon Nitride Densified with Liquids in the System MgO-AlN-SiO.sub.2 ", J. European Ceram Soc 5 (1989) 105-112.
Barta et al., "Pressureless Sintering of Silicon Nitride", Scitence of Ceramics vol. 11, (1981) pp. 219-224.
Masaki et al., "Pressureless Sintering of Silicon Nitride . . . ", Yogyo-Kyokai-Shi, 84(10) 1976.
Dupon et al., "Low-Temperature Route to Cordierite Ceramics Using a Reactive Liquid Phase Sintering Aid Dense Body Preparation and Green Tape Fabrication", Mat Res Soc Symp Proc, vol. 154, pp. 351-365. no date.
J. S. Reed, "Introduction to the Principles of Ceramic Processing", p. 349, John Wiley & Sons, New York (1987).
Montasser et al., "Inductively Copled Plasmas in Analytical Atomic Spectrometry" 2nd Ed., VCH Publishers, 1992.
Tan et al, "Applied Spectroscopy", 40(4), pp. 445-460, (1986).

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