Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2005-11-08
2009-02-17
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S487000
Reexamination Certificate
active
07491559
ABSTRACT:
A display panel comprising at least one display area and one peripheral circuit area having electronic components for driving the display components in the display area. The electronic components in the display area are fabricated substantially on a polysilicon layer converted from amorphous silicon by a solid phase crystallization process, whereas the electronic components in the peripheral circuit area are fabricated substantially on a polysilicon layer converted from amorphous silicon first by the solid phase crystallization process and then by laser annealing. As such, display area has a more uniform poly-Si layer substantially free of defects associated with laser annealing, and the peripheral circuit has a poly-Si layer with higher electron mobility.
REFERENCES:
patent: 5744824 (1998-04-01), Kousai et al.
patent: 6165875 (2000-12-01), Fonash et al.
patent: 6835606 (2004-12-01), Peng et al.
patent: 7184106 (2007-02-01), Peng
patent: 2004/0087118 (2004-05-01), Maegawa et al.
patent: 2004/0180481 (2004-09-01), Voutas et al.
patent: 2005/0070035 (2005-03-01), Yazaki et al.
patent: 2005/0105037 (2005-05-01), Kim et al.
patent: 2005/0173709 (2005-08-01), Lee et al.
patent: 2006/0054896 (2006-03-01), Van Der Zang et al.
Asia Display/IMID 04 Proceedings; Nakajima et al.; “The Latest Poly-Si TFT Circuit Technologies for System-On-Glass LCD”; pp. 1-6; 2004.
AU Optronics Corporation
Coleman W. David
Ware Fressola Van Der Sluys & Adolphson LLP
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