Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1985-11-26
1988-08-09
Pianalto, Bernard D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 99, 427275, 427294, 427299, 427377, 4273977, B05D 306
Patent
active
047627280
ABSTRACT:
A silicon nitride layer is prepared on the surface of a silicon substrate by carrying out a surface reaction on the substrate in a vacuum chamber that contains an electrode which is capacitively coupled to an rf generator. A second electrode within the chamber, or a metal wall of the chamber itself, is connected to ground. The silicon substrates to be treated are placed on one of the electrodes to be in electrical and physical contact therewith, and a reagent gas that contains nitrogen is introduced into the chamber. An rf voltage is then applied between the electrodes to ionize and activate the gas, and cause ions and other active species thereof to be directed into the silicon substrate. The nitrogen ions and other active species that are created as a result of the application of the rf power can be directed at the surface of a number of wafers simultaneously. The thin nitride films that are formed by the process have application both as barriers for device isolation and as dielectric components of electrical devices.
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Anand Kranti V.
Barry Michael L.
Cairns Bruce R.
Keyser Thomas
Petro William G.
Fairchild Semiconductor Corporation
LaBarre James A.
Patch Lee
Pianalto Bernard D.
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