Low temperature photolytic deposition of aluminum nitride thin f

Details Low temperature photolytic deposition of aluminum nitride thin f Low temperature photolytic deposition of aluminum nitride thin f

1995-11-21

1997-07-22

Niebling, John

Fishing, trapping, and vermin destroying

437228, 437241, 427555, 20419225, 148DIG113, 148DIG158, H01L 2102

Patent

active

056503610

ABSTRACT:
Thin films of aluminum nitride are deposited at 350 K on silicon, GaAs, fused quartz, and KBr substrates using gas-phase 193 nm excimer laser photolysis of trimethylamine alane and ammonia precursors without a thermally induced or a spontaneous reaction between them, resulting in AlN thin films that are amorphous, smooth and featureless having a band gap of 5.8 eV, a refractive index of 2.0, a breakdown electric field breakdown of 10.sup.8 V/m, a low-frequency dielectric constant of 6.0-6.9, high-frequency dielectric constant of 3.9-4.0, well suited for many thin film applications.

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