Low temperature P.sub.2 O.sub.5 oxide diffusion source

Details Low temperature P.sub.2 O.sub.5 oxide diffusion source Low temperature P.sub.2 O.sub.5 oxide diffusion source

1995-07-05

1997-08-12

Dang, Trung

Fishing, trapping, and vermin destroying

252150, 423263, 438567, H01L 21223

Patent

active

056565410

ABSTRACT:
The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.

REFERENCES:
patent: 4033790 (1977-07-01), Gunjigake
patent: 4195226 (1980-03-01), Robbins
patent: 4846902 (1989-07-01), Pickrell
patent: 4891331 (1990-01-01), Rapp
Durrant, Introduction to Advanced Inorganic Chemistry John Wiley & Sons, NY (1970) pp. 1197-1202.

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