Low temperature nitride used as Cu barrier layer

Details Low temperature nitride used as Cu barrier layer Low temperature nitride used as Cu barrier layer

2006-01-10

2006-01-10

Schillinger, Laura (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S774000

Reexamination Certificate

active

06984893

ABSTRACT:
A method of depositing a non-conductive barrier layer onto a metal surface wherein the resistance of the metal remains substantially unchanged before and after the non-conductive barrier layer deposition. The deposition process provides a low temperature processing environment so as to inhibit the formation of impurities such as silicide in the metal, wherein the silicide can adversely increase the resistance of the underlying metal.

REFERENCES:
patent: 4513021 (1985-04-01), Purdes et al.
patent: 5103285 (1992-04-01), Furumura et al.
patent: 5563102 (1996-10-01), Michael
patent: 5818071 (1998-10-01), Loboda et al.
patent: 5831283 (1998-11-01), Batey et al.
patent: 6159857 (2000-12-01), Liu et al.
patent: 6174810 (2001-01-01), Islam et al.
patent: 6255217 (2001-07-01), Agnello et al.
patent: 6271595 (2001-08-01), McGahay et al.
Tanaka et al., “Low-k film for Cu interconnects Integration Fabricated by Ultra Low Temperature Thermal CVD”, Symposium on VLSI Technology Digest of Technical Papers, 1999, pp 47-48.
Audisio et al, “Silicon nitride coatings on copper”, J. Electrochem. Soc.: Electromemical Science and Technology, vol. 119 No. 4, 1972 pp 408-411.

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