Low temperature microwave annealing of semiconductor devices

Details Low temperature microwave annealing of semiconductor devices Low temperature microwave annealing of semiconductor devices

1980-03-14

1981-12-01

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 219121L, 357 91, 427 451, 427 531, H01L 21263, H05B 903

Patent

active

043034551

ABSTRACT:
Briefly, and in general terms, the present invention provides a process for fabricating a semiconductor device, the device includes a semiconductor substrate having a major surface including an ion implanting region, wherein one fabrication step in the process subsequent to the formation of the ion implantation region is to direct a beam of microwave radiation at the device for annealing the ion implanted regions.

REFERENCES:
patent: 3777099 (1973-12-01), Levinson
patent: 4147911 (1979-04-01), Nishitani
patent: 4181538 (1980-01-01), Narayan et al.
patent: 4221948 (1980-09-01), Jean
patent: 4240843 (1980-12-01), Celler et al.
Celler et al. Appl. Phys. Letts. 32(8), 1978, p. 464.
Danileiko et al. Sov. Phys. Semicond. 12 (1978) 1152 (English).
Bomke et al. Appl. Phys. Letts. 33 (1978) 955.

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