Low temperature methods of etching semiconductor substrates

Details Low temperature methods of etching semiconductor substrates Low temperature methods of etching semiconductor substrates

2005-08-22

2008-07-01

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S008000, C438S459000

Reexamination Certificate

active

07393700

ABSTRACT:
Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molecule of the second gas may include a hydrogen atom, and the second gas may lower a temperature at which the first gas chemically reacts with the semiconductor substrate. The mixture of the first and second gases may be provided adjacent the semiconductor substrate to etch the semiconductor substrate.

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patent: 2002/0192930 (2002-12-01), Rhee et al.
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patent: 2005/0037610 (2005-02-01), Cha et al.
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Korean Notice to Submit Response for Application No. 10/2004-0066530 mailed Mar. 24, 2006.
English Translation of Korean Notice to Submit Response for Application No. 10/2004-0066530 mailed Mar. 24, 2006.

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