Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2005-08-22
2008-07-01
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S008000, C438S459000
Reexamination Certificate
active
07393700
ABSTRACT:
Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molecule of the second gas may include a hydrogen atom, and the second gas may lower a temperature at which the first gas chemically reacts with the semiconductor substrate. The mixture of the first and second gases may be provided adjacent the semiconductor substrate to etch the semiconductor substrate.
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Korean Notice to Submit Response for Application No. 10/2004-0066530 mailed Mar. 24, 2006.
English Translation of Korean Notice to Submit Response for Application No. 10/2004-0066530 mailed Mar. 24, 2006.
Jung In-Soo
Lee Deok-Hyung
Lee Jong-Wook
Lee Sun-Ghil
Lee Young-Eun
Le Thao P.
Samsung Electronic Co. Ltd.
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