Low temperature methods of etching semiconductor substrates

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed

Reexamination Certificate

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C438S008000, C438S459000

Reexamination Certificate

active

07393700

ABSTRACT:
Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molecule of the second gas may include a hydrogen atom, and the second gas may lower a temperature at which the first gas chemically reacts with the semiconductor substrate. The mixture of the first and second gases may be provided adjacent the semiconductor substrate to etch the semiconductor substrate.

REFERENCES:
patent: 7235492 (2007-06-01), Samoilov
patent: 2002/0022368 (2002-02-01), Lee
patent: 2002/0192930 (2002-12-01), Rhee et al.
patent: 2003/0091739 (2003-05-01), Sakamoto et al.
patent: 2005/0037610 (2005-02-01), Cha et al.
patent: 63-062315 (1988-03-01), None
patent: 10-321533 (1998-12-01), None
patent: 2002-70820 (2002-09-01), None
patent: 1020040013300 (2004-02-01), None
Korean Notice to Submit Response for Application No. 10/2004-0066530 mailed Mar. 24, 2006.
English Translation of Korean Notice to Submit Response for Application No. 10/2004-0066530 mailed Mar. 24, 2006.

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