Low temperature method of manufacturing epitaxial titanium silic

Details Low temperature method of manufacturing epitaxial titanium silic Low temperature method of manufacturing epitaxial titanium silic

1996-11-01

1998-03-24

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, H01L 21283

Patent

active

057312265

ABSTRACT:
A method of manufacturing epitaxial titanium silicide in a metal silicide processing has a lower than usual processing temperature requirement, and is therefore suitable for use in the manufacturing of integrated circuits. The epitaxial titanium silicide so formed is made without a grain boundary and is thus capable of lowering the electrical resistance of the titanium silicide. First, a silicon substrate with an exposed crystalline silicon layer on the surface is provided. Then a titanium layer and a titanium nitride layer are sequentially formed. Finally, using a rapid thermal processing, an epitaxial titanium silicide layer is formed.

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Wang, M., et al., "Phase Formation . . . ", J. Appl. Phys., 71(12), 15 Jun. 1992, pp. 5918-5925.
Tsukamoto, K., et al., "Self-aligned Titanium . . . " 2419 Jap. J. Appl. Phys. Suppl. Aug. 1984, pp. 47-51.
Shatas, S., et al., "Workshop on Refractory Metal Silicides", Sep. 1983, San Juan Bautista, California, pp. 7-20.

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