Low temperature method of forming materials using one or more me

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

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75343, 75366, 423289, 423297, 423346, 423409, 423411, 423412, 423439, 423440, 423592, 423606, 423607, 423608, 423625, 427249, 427253, 4272552, 4272553, C01B 21068, C01B 2106, C01B 3130, C01B 1322

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051495147

ABSTRACT:
A low temperature process is described for forming a coating or powder comprising one or more metals or metal compounds by first reacting one or more metal reactants with a halide-containing reactant to form one or more reactive intermediates capable of reacting, disproportionating, or decomposing to form a coating or powder comprising the one or more metal reactants. When one or more metal compounds are formed, either as powders or as coatings, a third reactant may be injected into a second reaction zone in the reactor to contact the one or more reactive intermediates formed in the first reaction zone to thereby form one or more metal compounds such as metal nitrides, carbides, oxides, borides, or mixtures of same.

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