Low temperature method of deposition silicon dioxide

Details Low temperature method of deposition silicon dioxide Low temperature method of deposition silicon dioxide

1984-12-28

1986-02-25

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

B05D 306

Patent

active

045728410

ABSTRACT:
It has been found that by subjecting a source of silicon and an oxygen containing gaseous precursor to a glow discharge in the presence of an excess of hydrogen, a silicon dioxide film of substantially increased density can be deposited onto a substrate. Alternatively, where it is important to have an enhanced silicon to silicon dioxide interface, the process may comprise a first step of growing a silicon dioxide film between 50 and 1000.ANG. thick by low temperature plasma oxidation and a second step of depositing by glow discharge an additional thickness of silicon dioxide layer, which is produced from a plasma of a source of silicon and an oxygen-containing gaseous precursor, in an excess of hydrogen.

REFERENCES:
patent: 4361595 (1982-11-01), Kaganowicz et al.
James A. Amick, et al., "Deposition Techniques for Dielectric Films on Semiconductor Devices", J. Vac. Sci. Technol., vol. 14, No. 5, Sep./Oct. 1977, pp. 1053-1063.
J. L. Miles, et al., "The Formation of Metal Oxide Films Using Gaseous and Solid Electrolytes", Journal of the Electrochemical Society, Dec. 1963, pp. 1240-1245.

Affiliated with

Also associated with

Rating

Low temperature method of deposition silicon dioxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low temperature method of deposition silicon dioxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature method of deposition silicon dioxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1012680