Low-temperature low-stress blanket tungsten film

Details Low-temperature low-stress blanket tungsten film Low-temperature low-stress blanket tungsten film

1992-11-09

1993-12-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437189, 437190, H01L 2144

Patent

active

052721124

ABSTRACT:
A chemical vapor deposition process performed at a temperature below 440 degrees C. for blanket tungsten deposition as a step in manufacturing integrated circuits deposits an integrated film suitable for voidless fill of vias as small as 0.5 microns in width and with aspect ratios of more than 2, while providing resistivity well below 100 micro-ohms per square, film stress generally in the mid 7E+09 dynes per square centimeter and below, and reflectivity of more than 40%, measured relative to silicon at 436 nanometer wavelength for 1 micron film thickness, while avoiding the use of nitrogen in the process.

REFERENCES:
patent: 5028565 (1991-07-01), Chang et al.
patent: 5108952 (1992-04-01), Matsuhashi
patent: 5202287 (1993-04-01), Joshi et al.

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