Low temperature intrinsic gettering technique

Details Low temperature intrinsic gettering technique Low temperature intrinsic gettering technique

1988-05-05

1989-08-29

Gonzalez, Frank

350 9613, G02B 612

Patent

active

048611263

ABSTRACT:
Ionic drift in integrated optical devices is reduced by the utilization of a gettering layer interposed between the surface dielectric and the electrodes. The material used to form this layer is capable of gettering the mobile ions at a relatively low temperature (for example <600.degree. C.).

REFERENCES:
patent: 3632438 (1972-01-01), Richardson et al.
patent: 3963468 (1976-06-01), Jaeger et al.
patent: 4284663 (1981-08-01), Curruthers et al.
patent: 4525239 (1985-06-01), Wang
patent: 4597985 (1986-07-01), Chandross et al.

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