Low temperature interlayer dielectric of arsenosilicate glass

Details Low temperature interlayer dielectric of arsenosilicate glass Low temperature interlayer dielectric of arsenosilicate glass

1990-09-12

1992-07-14

Jackson, Jr., Jerome

357 52, 357 54, 357 71, H01L 21316

Patent

active

051307820

ABSTRACT:
The use of arsenosilicate glass (ASG) as a dielectric layer in semiconductors, and methods of producing arsenosilicate glasses as conformal coatings are described. The ASG coatings may be produced as the result of heterogeneous reactions involving silane, arsine and oxygen. In multilevel semiconductors ASG may be used over the polysilicon gates 3, over aluminium metallisation 5 and second dielectric layer 6, and/or over second metallisation 7.

REFERENCES:
patent: 3925572 (1975-12-01), Naber
patent: 4271582 (1981-06-01), Shirai et al.
patent: 4319260 (1982-03-01), Tasch et al.
patent: 4733289 (1988-03-01), Tsurumaru
"Improved Atmospheric-Pressure Chemical-Vapor-Deposition System for Depositing Silica . . . " Solid State Technology Oct. 1981 pp. 123-128 Winkle et al.

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